January 28, 2014

3

IDTP9167

Advanced Datasheet

ELECTRICAL CHARACTERISTICS

VPVIN = 8V, VSYS = 5V, VO = 1V, L = 0.47µH, COUT = 2 x 47µF, CPVIN = 2 x 10µF, CVSYS = 4.7μF, CVPG = 1.0μF, TA = 25°C, unless otherwise

noted.

Table 4 – Electrical Characteristics

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

VPVIN

PVIN supply voltage range

PVIN must be greater than VSYS by

0.6V at all times, including during start-

up and shut-down supply sequencing

5.6

12.6

V

VSYS

VSYS supply input

4.5

5.5

V

VPG

High-side LDO output voltage PVIN ≥ VSYS + 0.5V

PVIN -

VSYS

V

ISHDN(PVIN)

PVIN shutdown current

VSYS = 0V or DIO = 0V

1

2

μA

ISHDN(VSYS)

VSYS shutdown current

DIO = 0V

1

μA

IQ(PVIN)

PVIN quiescent current

Standby mode: DIO = high, DIF = low

3

5

μA

Idle mode: DIO = high, DIF = active

LX not switching

200

275

μA

IQ(VSYS)

VSYS quiescent current

Standby mode: DIO = high, DIF = low

100

150

μA

Idle mode: DIO = high, DIF = active

LX not switching

300

375

μA

IOP(PVIN)

PVIN operating supply

current

Active mode, switching, no load

8

18

mA

IOP(VSYS)

VSYS operating supply

current

Active mode, switching, no load

6

10

mA

IOUT

Continuous output current

TJ < 115°C, Efficiency = 80%

(GBD)

3.5

A

IPULSE

Maximum pulse load current

Pulse duration < 1ms

Pulse duty-cycle < 0.1%

5.5

A

R(on)

High side switch

100

150

mΩ

Low side switch

35

55

mΩ

fSW

Switching frequency

Set by half of DIF input frequency

0.5 x fDIF

MHz

ILIM

LX peak current limit

Occurs at max DIF duty-cycle of 83%

5.9

A

TSD

Thermal shutdown

temperature

(GBD)

127

135

°C