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BAS321 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BAS321 데이터시트(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 1999 Feb 09 2 Philips Semiconductors Product specification General purpose diode BAS321 FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 200 V • Repetitive peak reverse voltage: max. 250 V • Repetitive peak forward current: max. 625 mA. APPLICATIONS • General purpose switching in e.g. surface mounted circuits. DESCRIPTION The BAS321 is a general purpose diode fabricated in planar technology and encapsulated in a plastic SOD323 package. PINNING PIN DESCRIPTION 1 cathode 2 anode Fig.1 Simplified outline (SOD323) and symbol. Marking code: A7 handbook, halfpage 12 MAM406 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed circuit-board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 250 V VR continuous reverse voltage − 200 V IF continuous forward current see Fig. 2; note 1 − 250 mA IFRM repetitive peak forward current tp < 0.5 ms; δ≤ 0.25 − 625 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig. 4 t=1 µs − 9A t = 100 µs − 3A t = 10 ms − 1.7 A Ptot total power dissipation Tamb =25 °C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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