1996 Sep 10

3

Philips Semiconductors

Product specification

High-speed double diode

BAS56

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

−

60

V

repetitive peak reverse voltage

series connection

120

V

continuous reverse voltage

−

60

V

continuous reverse voltage

series connection

−

120

V

continuous forward current

single diode loaded; see Fig.2;

note 1

−

200

mA

double diode loaded; see Fig.2;

note 1

−

150

mA

repetitive peak forward current

single diode loaded

−

600

mA

double diode loaded

−

430

mA

non-repetitive peak forward current

surge; see Fig.4

t=1

µs

−

9A

t = 100

µs

−

3A

t = 10 ms

−

1.7

A

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C