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TIP42C 데이터시트(PDF) 1 Page - Silicon Supplies |
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TIP42C 데이터시트(HTML) 1 Page - Silicon Supplies |
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1 / 2 page ![]() Rev 1.0 02/09/17 Bipolar Medium Power Transistor in bare die form Complement to PNP TIP41C NPN Transistor Bare Die, TIP42C Features: Die Dimensions in µm (mils) 2286 (99) Collector current up to 6A High switching speed Improved hFE linearity Solderable back metal High Reliability tested grades for Military + Space Ordering Information: The following part suffixes apply: No suffix - Commercial grade die “H” – Hi-rel grade die + MIL-STD-38534 Class H LAT “K” – Hi-rel grade die + MIL-STD-38534 Class K LAT. LAT = Lot acceptance Test. For information on Hi-Rel LAT flows please see below. www.siliconsupplies.com\bare-die-lot-qualification DIE BACK = COLLECTOR Supply Formats: Mechanical Specification Default – Die in Waffle Pack (100 per tray capacity) Sawn Wafer on Tape – Specific request Unsawn Wafer – Specific request With additional electrical selection – Specific request Sawn as pairs or adjacent pair pick – Specific request Die Size (Excluding Saw Street) 2286 x 2032 99 x 80 µm mils Base Pad Size Emitter Pad Size 12.5 x 42 13 x 48 mils Die Thickness 318 (±25) 12.5 (±1) µm mils Top Metal Composition Al Back Metal Composition Ti/Ni/Ag Page 1 of 2 www.siliconsupplies.com |
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