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BAT74S 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BAT74S 데이터시트(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page ![]() 1998 Jul 10 3 Philips Semiconductors Product specification Schottky barrier double diode BAT74S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in reverse and the other in forward operation at the same moment, total device current is max. 200 mA. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp < 10 ms 600 mA Ptot total power dissipation Tamb ≤ 25 °C; see Fig.2 − 230 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C Double diode operation VR continuous reverse voltage − 30 V VR continuous reverse voltage series connection − 60 V IF continuous forward current − 110(1) mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 200 mA |
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