BAS56

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© Nexperia B.V. 2010. All rights reserved.

Product data sheet

Rev. 3 — 29 June 2010

3 of 12

Nexperia

BAS56

High-speed double diode

5.

Limiting values

[1] Series connection.

[2] Device mounted on an FR4 PCB.

[3] Single diode loaded.

[4] Double diode loaded.

[5] Tj =25 °C prior to surge.

6.

Thermal characteristics

[1] Device mounted on an FR4 PCB.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-60

V

[1] -120

V

VR

reverse voltage

-

60

V

[1] -120

V

IF

forward current

[2][3] -200

mA

[2][4] -150

mA

IFRM

repetitive peak forward

current

[3] -600

mA

[4] -430

mA

IFSM

non-repetitive peak forward

current

square wave

[5]

tp =1 μs-

9

A

tp = 100 μs-

3

A

tp =10ms

-

1.7

A

Ptot

total power dissipation

Tamb =25 °C

[2] -250

mW

Tj

junction temperature

-

150

°

C

Tstg

storage temperature

−

65

+150

°

C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

500

K/W

Rth(j-t)

thermal resistance from

junction to tie-point

-

-

360

K/W