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BAV23S 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BAV23S 데이터시트(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1999 May 05 2 Philips Semiconductors Product specification General purpose double diode BAV23S FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 200 V • Repetitive peak reverse voltage: max. 250 V • Repetitive peak forward current: max. 625 mA. APPLICATIONS • General purpose where high breakdown voltages are required. DESCRIPTION The BAV23S consists of two general purpose diodes connected in series fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. PINNING PIN DESCRIPTION 1 anode 2 cathode 3 common connection Fig.1 Simplified outline (SOT23) and symbol. Marking code: L31. handbook, halfpage 21 3 MAM232 1 2 3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 250 V VRRM repetitive peak reverse voltage series connection − 500 V VR continuous reverse voltage − 200 V VR continuous reverse voltage series connection − 400 V IF continuous forward current single diode loaded; note 1; see Fig.2 − 225 mA double diode loaded; note 1; see Fig.2 − 125 mA IFRM repetitive peak forward current − 625 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.4 t=1 µs − 9A t = 100 µs − 3A t = 10 ms − 1.7 A Ptot total power dissipation Tamb =25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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