BAV45 datasheet(3/6 Pages) PHILIPS

3 / 6 page

1996 Mar 13

Philips Semiconductors

Product speciﬁcation

Picoampere diode

BAV45

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on a FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

forward voltage

IF = 10 mA; see Figs 3 and 4

reverse current

see Fig.5

VR =5V

VR =5V; Tj =80 °C

250

VR = 20 V

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

1.3

trr

reverse recovery time

when switched from IF = 10 mA to IR = 10 mA;

RL = 100 Ω; measured at IR = 1 mA; see Fig.7

600

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient; note 1

500

K/W

GRAPHICAL DATA

Fig.2

Maximum permissible continuous forward

current as a function of ambient

temperature.

handbook, halfpage

100

(mA)

150

100

MBG530

Tamb (

oC)

Tj =25 °C.

Fig.3

Forward current as a function of forward

voltage; typical values.

handbook, halfpage

1.0

0.5

1.5

100

MBG528

VF (V)

(mA)

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