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ZLED7001 데이터시트(PDF) 11 Page - Renesas Technology Corp |
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ZLED7001 데이터시트(HTML) 11 Page - Renesas Technology Corp |
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11 / 15 page ![]() ZLED7001 Datasheet © 2016 Integrated Device Technology, Inc. 11 April 20, 2016 The current sense resistor can now be calculated from the internal comparator threshold VCSTH and the peak current as Ω = = = 596 . 0 5 . 402 240 _ mA mV I V R PEAK O CSTH CS This value can be built by a 0.68 Ω in parallel with a 4.7Ω type. MOSFET (Q1) and Diode (D1) The MOSFET and diode must be dimensioned with a minimum 50% safety rating of their relevant voltage and current parameters. Thus a FET with minimum 500V drain-source breakdown voltage and 0.6A drain current as well as a fast recovery diode with at least 500V reverse voltage and a 0.6A forward current may be selected. 3 ESD/Latch-Up-Protection All pins have an ESD protection of >± 2000V according human body model (HBM). The ESD test follows the H uman Body Model with 1.5 kΩ/100 pF based on MIL 883-G, Method 3015.7 Latch-up protection of >± 100mA has been proven based on JEDEC No. 78A Feb. 2006, temperature class 1. |
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