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ISL7119RHX/SAMPLE 데이터시트(PDF) 3 Page - Renesas Technology Corp |
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ISL7119RHX/SAMPLE 데이터시트(HTML) 3 Page - Renesas Technology Corp |
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3 / 6 page ![]() ISL7119RH, ISL7119EH FN6607 Rev 5.01 Page 3 of 5 Feb 9, 2023 Die Characteristics DIE DIMENSIONS: 2030µm x 2030µm (~80 mils x 80 mils) Thickness: 483µm 25.4µm (19 mils 1 mil) INTERFACE MATERIAL: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kÅ 1.0kÅ Top Metallization: Type: AlSiCu Thickness: 16.0kÅ 2kÅ Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 66 Metallization Mask Layout ISL7119RH, ISL7119EH |
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