ISL70023SEHLSLASHPROTO datasheet(1/13 Pages) RENESAS

부품명	ISL70023SEHL/PROTO

상세설명	100V, 60A Enhancement Mode GaN Power Transistor

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제조업체	RENESAS [Renesas Technology Corp]

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FN8975 Rev.4.01

Page 1 of 12

May 4, 2022

FN8975

Rev.4.01

May 4, 2022

ISL70023SEH, ISL73023SEH

100V, 60A Enhancement Mode GaN Power Transistor

DATASHEET

The ISL70023SEH and ISL73023SEH are 100V

N-channel enhancement mode GaN power transistors.

These GaN FETs have been characterized for destructive

Single Event Effects (SEE) and tested for Total Ionizing

Dose (TID) radiation. Applications for these devices

include commercial aerospace, medical, and nuclear

power generation.

GaN’s exceptionally high electron mobility and low

temperature coefficient allows for very low rDS(ON),

while its lateral device structure and majority carrier

diode provide exceptionally low QG and zero QRR. The

end result is a device that can operate at a higher

switching frequency with more efficiency while reducing

the overall solution size.

By combining the exceptional performance of the GaN

FET in a hermetically sealed Surface Mount Device

(SMD) package with manufacturing in a

MIL-PRF-38535 like flow results in best-in-class power

transistors that are ideally suited for high reliability

applications.

Applications

• Switching regulation

• Motor drives

• Relay drives

• Inrush protection

• Down hole drilling

• High reliability industrial

Features

• Very low rDS(ON) 5mΩ (typical)

• Ultra low total gate charge 14nC (typical)

• SEE hardness (see SEE report for details)

• SEL/SEB LETTH (VDS = 100V, VGS = 0V):

86MeV•cm2/mg

• ISL70023SEH radiation accepting testing

• High dose rate (50-300rad(Si)/s): 100krad(Si)

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

• ISL73023SEH radiation accepting testing

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

• Ultra small hermetically sealed 4 Ld Surface Mount

Device (SMD) package

• Package area: 42mm2

• Full military-temperature range operation

•TA = -55°C to +125°C

•TJ = -55°C to +150°C

Figure 1. ISL70023SEH 4 Ld SMD Package

Figure 2. On-State Resistance (+25°C)

0

5

10

15

20

25

2.5

3.0

3.5

4.0

4.5

5.0

Gate-Source Voltage (V)

ID = 0.5A

ID = 6.0A

ID = 12.0A

ID = 18.0A

ID = 24.0A

ID = 30.0A

유사한 부품 번호 - ISL70023SEHL/PROTO

제조업체	부품명	데이터시트	상세설명
Renesas Technology Corp	ISL70023SEHL/PROTO	527Kb / 14P	100V, 60A Enhancement Mode GaN Power Transistor Mar 28, 2024

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