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ISL70024SEHL/PROTO 데이터시트(PDF) 5 Page - Renesas Technology Corp

부품명 ISL70024SEHL/PROTO
상세설명  200V, 7.5A Enhancement Mode GaN Power Transistor
PDF  13 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL70024SEHL/PROTO 데이터시트(HTML) 5 Page - Renesas Technology Corp

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FN8976 Rev.6.01
Page 5 of 12
May 5, 2022
ISL70024SEH, ISL73024SEH
2. Specifications
2.4
Recommended Operating Conditions
2.5
Electrical Specifications
Parameter
Maximum
Unit
Temperature
-55 to +125
°C
VDS
160
V
ID (VGS = 5.0V, TC = +25°C) (Note 9)7.5
A
ID (VGS = 5.0V, TC = +105°C) (Note 9)4.5
A
Note:
9. TJ = +150°C. Current limited by package constraints.
Unless otherwise noted, VDS = 160V. Boldface limits apply across the operating temperature range, -55°C to +125°C; over a total
ionizing dose of 100krad(Si) with exposure at a high dose rate of 50-300rad(Si)/s (ISL70024SEH only); or over a total ionizing
dose of 75krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
Parameter
Symbol
Test Conditions
Min
(Note 11)
Typ
(Note 11)
Max
(Note 11)Unit
Static Characteristics
Drain-to-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 125µA
200
--
V
Drain-to-Source Leakage Current
IDSS
VDS = 160V, VGS = 0V
-
1
115
µA
Drain-to-Gate Leakage Current
IGSX
VDS = 160V, VGS = 0V
-
1
115
µA
Gate-to-Source Forward Leakage
IGSS
VGS = 5V
-
0.8
2.5
mA
Gate-to-Source Reverse Leakage
VGS = -4V
-100
-20
-
µA
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 1.5mA
0.8
1.4
2.5
V
Drain-to-Source ON-Resistance
rDS(ON) VGS = 5V, ID = 7A
-
45
110
mΩ
Source-to-Drain Forward Voltage
VSD
IS = 0.5A, VGS = 0V
0.8
1.8
3.5
V
Dynamic Characteristics
Input Capacitance
CISS
VDS = 100V, VGS = 0V (Note 12)
-
270
-
pF
Output Capacitance
COSS
VDS = 100V, VGS = 0V, TA = +25°C
-
150
200
pF
Reverse Transfer Capacitance
CRSS
VDS = 100V, VGS = 0V (Note 12)-
1
-
pF
Gate Resistance
rG
TA = +25°C (Note 12)-
60
-
mΩ
Total Gate Charge
QG
VDS = 100V, VGS = 5V, ID = 7A, TA = +25°C
-
2.5
5
nC
Gate Charge at Threshold
QG(th) VDS = 100V, ID = 7A (Note 12)
-
0.4
-
nC
Gate-to-Source Charge
QGS
VDS = 100V, ID = 7A, TA = +25°C
-
0.8
2.0
nC
Gate-to-Drain Charge
QGD
VDS = 100V, ID = 7A, TA = +25°C
-
0.6
2.0
nC
Output Charge
QOSS
VDS = 100V, VGS = 0V (Note 12)-
23
-
nC
Notes:
10. Typical values shown are not guaranteed.
11. Parameters with MIN and/or MAX limits are 100% tested at -55°C, +25°C, and +125°C, unless otherwise specified.
12. Limits are established by characterization and/or design and are not tested.



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