| 전자부품 데이터시트 검색엔진 |
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ISL70227SEHVX/SAMPLE 데이터시트(PDF) 8 Page - Renesas Technology Corp |
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ISL70227SEHVX/SAMPLE 데이터시트(HTML) 8 Page - Renesas Technology Corp |
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8 / 18 page ![]() ISL70227SEH FN7958 Rev 3.00 Page 8 of 18 July 18, 2014 Low Dose Rate Post Radiation Characteristics V S ±15V, VCM = 0V, VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. This data is typical test data post radiation exposure at a rate of 10mrad(Si)/s. This data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed . FIGURE 3. OFFSET VOLTAGE vs RADIATION FIGURE 4. POSITIVE INPUT BIAS CURRENT vs RADIATION FIGURE 5. NEGATIVE INPUT BIAS CURRENT vs RADIATION FIGURE 6. OFFSET CURRENT vs RADIATION FIGURE 7. TOTAL SUPPLY CURRENT vs RADIATION TOTAL DOSE (krad(Si)) 0 5 10 15 20 25 0 10 2030 4050 60708090 100 GROUNDED BIASED TOTAL DOSE (krad(Si)) -25 -20 -15 -10 -5 0 5 0 102030 4050 60708090 100 GROUNDED BIASED TOTAL DOSE (krad(Si)) -25 -20 -15 -10 -5 0 0 10 2030 4050607080 90 100 GROUNDED BIASED TOTAL DOSE (krad(Si)) -25 -20 -15 -10 -5 0 0 10 2030 4050 60 708090 100 GROUNDED BIASED TOTAL DOSE (krad(Si)) 0 5 10 0 102030 4050 607080 90 100 GROUNDED BIASED |
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