FN8892 Rev.3.00

Page 21 of 29

Nov.6.20

ISL71444M

5. Radiation Tolerance

5.

Radiation Tolerance

The ISL71444M is a radiation tolerant device for commercial space applications, Low Earth Orbit (LEO) applications,

high altitude avionics, launch vehicles, and other harsh environments. This device’s response to Total Ionizing Dose

(TID) radiation effects and Single Event Effects (SEE) has been measured, characterized, and reported in the

proceeding sections. However, TID performance is not guaranteed through radiation acceptance testing, nor is the

characterized SEE characterized performance guaranteed.

5.1

Total Ionizing Dose (TID) Testing

5.1.1

Introduction

Total dose testing of the ISL71444MVZ-T proceeded in accordance with the guidelines of MIL-STD-883 Test

Method 1019. The experimental matrix consisted of 18 samples irradiated under bias, as shown in Table 1, and

18 samples irradiated with all pins grounded (unbiased). Three control units were used. The bias configuration

is shown in Figure 55.

Samples of the ISL71444MVZ-T were drawn from fabrication lot X7J8AB and were packaged in the

production 14 Ld plastic TSSOP, Package Outline Drawing (POD) M14.173. The samples were screened to

datasheet limits at room temperature only, before irradiation.

Total dose irradiations were performed using a Hopewell Designs N40 panoramic vault-type low dose rate

60Co irradiator located in the Renesas Palm Bay, Florida facility. The dose rate was 0.0089rad(Si)/s

(8.9mrad(Si)/s). PbAl spectrum hardening filters were used to shield the test board and devices under test

against low energy secondary gamma radiation.

Downpoints for the testing were 0krad(Si), 10krad(Si), 20krad(Si), and 30krad(Si). Following irradiation, the

samples were subjected to a high temperature biased anneal for 168 hours at +100°C.

All electrical testing was performed outside the irradiator using production Automated Test Equipment (ATE)

with data logging of all parameters at each downpoint. All downpoint electrical testing was performed at room

temperature.

Figure 55. Irradiation Bias Configuration for the IS71444M

Notes:

V+ = +18V, V- = -18V

VOUT

+

-

ISL71444M

V+

V-