ISL71831SEH

FN8759 Rev.6.00

Page 13 of 21

Dec 8, 2022

Post Low Dose Rate Radiation Characteristics (V+ = 5V) Unless otherwise specified,

V+ = 5V, VCM =0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is

intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed.

FIGURE 29. rDS(ON) (V+ = 4.5V), BIASED

FIGURE 30. rDS(ON) (V+ = 4.5V), GROUNDED

FIGURE 31. rDS(ON) MINIMUM (V+ = 4.5V)

FIGURE 32. rDS(ON) MAXIMUM (V+ = 4.5V)

FIGURE 33. rDS(ON) FLATNESS (V+ = 4.5V)

FIGURE 34. rDS(ON) MATCH (V+ = 4.5V, VIN = 0.5V)

0

20

40

60

80

100

120

0

1020

304050607080

LOW DOSE RATE RADIATION (krad(Si))

VIN = 0.5V

VIN = 2.25V

VIN = 4V

0

20

40

60

80

100

120

0

1020304050

607080

LOW DOSE RATE RADIATION (krad(Si))

VIN = 4V

VIN = 2.25V

VIN = 0.5V

0

20

40

60

80

100

120

0

10

2030405060

7080

BIASED

GROUNDED

LOW DOSE RATE RADIATION (krad(Si))

0

20

40

60

80

100

120

0

10

2030

405060

7080

BIASED

GROUNDED

LOW DOSE RATE RADIATION (krad(Si))

0

5

10

15

20

25

30

35

40

45

0

102030

40

506070

80

LOW DOSE RATE RADIATION (krad(Si))

GROUNDED

BIASED

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0

1020

3040506070

80

LOW DOSE RATE RADIATION (krad(Si))

GROUNDED

BIASED