BC640 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 23

Philips Semiconductors

Product speciﬁcation

PNP medium power transistors

BC636; BC638; BC640

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−100

IE = 0; VCB = −30 V; Tj = 150 °C

−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−100

hFE

DC current gain

VCE = −2 V; see Fig.2

IC = −5mA

−

IC = −150 mA

250

IC = −500 mA

−

DC current gain

IC = −150 mA; VCE = −2 V; see Fig.2

BC636-10

160

BC636-16; BC638-16; BC640-16

100

250

VCEsat

collector-emitter saturation voltage

IC = −500 mA; IB = −50 mA

−−0.5

VBE

base-emitter voltage

IC = −500 mA; VCE = −2V

−−1V

transition frequency

IC = −50 mA; VCE = −5 V; f = 100 MHz 100

−

MHz

DC current gain ratio of the

complementary pairs

I

C = 150 mA; VCE =2V

−

1.6

FE1

FE2

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