PMEG6002EB_PMEG6002TV_1

Product data sheet

Rev. 01 — 24 November 2006

4 of 10

Nexperia

PMEG6002EB; PMEG6002TV

0.2 A very low VF MEGA Schottky barrier rectifiers

6.

Thermal characteristics

[1]

For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[4]

Soldering point of cathode tab.

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

PMEG6002EB

[1][2] -

-

400

K/W

PMEG6002TV

[1][2] -

-

416

K/W

[1][3] -

-

318

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

[4]

PMEG6002EB

-

-

75

K/W

PMEG6002TV

-

-

195

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VF

forward voltage

[1]

IF = 0.1 mA

-

130

170

mV

IF = 1 mA

-

190

230

mV

IF = 10 mA

-

260

300

mV

IF = 100 mA

-

420

470

mV

IF = 200 mA

-

540

600

mV

IR

reverse current

VR =10V

-

2

10

µA

VR = 60 V

-

20

100

µA

VR = 10 V; Tamb = 100 °C

-

310

-

µA

Cd

diode capacitance

VR = 1 V; f = 1 MHz

-

14

20

pF

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