BC846AF datasheet(4/8 Pages) PHILIPS

4 / 8 page

1999 May 18

Philips Semiconductors

Preliminary speciﬁcation

NPN general purpose transistors

BC846F; BC847F; BC848F series

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air; note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−

IE = 0; VCB = 30 V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

100

hFE

DC current gain

IC = 2 mA; VCE =5V

BC846AF; BC847AF; BC848AF

110

220

BC846BF; BC847BF; BC848BF

200

450

BC847CF; BC848CF

420

800

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−

200

IC = 100 mA; IB = 5 mA; note 1

−

400

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V

580

700

IC = 10 mA; VCE =5V

−

770

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

1.5

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−

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