1999 Apr 08

2

Philips Semiconductors

Product specification

NPN medium power transistors

BCP54; BCP55; BCP56

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V).

APPLICATIONS

• Switching.

DESCRIPTION

NPN medium power transistor in a SOT223 plastic

package. PNP complements: BCP51, BCP52 and BCP53.

PINNING

PIN

DESCRIPTION

1

base

2, 4

collector

3

emitter

Fig.1

Simplified outline (SOT223) and symbol.

handbook, halfpage

4

12

3

MAM287

Top view

3

2, 4

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BCP54

−

45

V

BCP55

−

60

V

BCP56

−

100

V

collector-emitter voltage

open base

BCP54

−

45

V

BCP55

−

60

V

BCP56

−

80

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

1A

peak collector current

−

1.5

A

peak base current

−

0.2

A

total power dissipation

−

1.33

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C