BC856T_SER datasheet(4/10 Pages) NEXPERIA

4 / 10 page

2000 Nov 15

NXP Semiconductors

Product data sheet

PNP general purpose transistors

BC856T; BC857T series

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air; note 1

833

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current VCB = −30 V; IE = 0

−

−15

VCB = −30 V; IE = 0; Tj = 150 °C

−

−5

μA

IEBO

emitter cut-off current

VEB = −5 V; IC = 0

−

−100

hFE

DC current gain

VCE = −5 V; IC = −2 mA

BC856AT; BC857AT

125

−

250

BC856BT; BC857BT

220

−

475

BC857CT

420

−

800

VCEsat

collector-emitter saturation

voltage

IC = −10 mA; IB = −0.5 mA

−

−200

IC = −100 mA; IB = −5 mA; note 1

−

−400

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V

−580

−

−700

IC = −10 mA; VCE = −5 V

−

−770

collector capacitance

VCB = −10 V; f = 1 MHz; IE = ie = 0

−

2.5

emitter capacitance

VEB = −0.5 V; f = 1 MHz; IC = ic = 0

−

transition frequency

IC = −10 mA; VCE = −5 V;

f = 100 MHz

100

−

MHz

noise figure

IC = −200 μA; VCE = −5 V;

RS = 2 kΩ; f = 1 kHz; B = 200 Hz

−

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