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LT3756 데이터시트(PDF) 23 Page - Analog Devices |
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LT3756 데이터시트(HTML) 23 Page - Analog Devices |
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23 / 31 page ![]() LT8355-1 23 Rev. A For more information www.analog.com Figure 8. Dual Boost Reference Layout for LT8355-1 9 10 11 12 13 28 27 26 25 24 14 23 6 5 4 3 2 1 7 17 18 19 20 21 22 16 8 15 FB1 ISP1 PWMTG1 GND FB2 ISP2 ISN2 PWMTG2 INTVCC LED+2 SENSEP2 SENSEP1 VIN ISN1 GND LED+1 GND SW1 SW2 GATE1 GATE2 GND VIN GND VIA ROUTING ON THE 2ND PLANE 8355-1 F08 APPLICATIONS INFORMATION performance. Keep the output capacitor and catch diode as close as possible to the external NMOS switch and switch current sense resistor to help this. For more infor- mation about hot loops see Analog Devices Application Notes AN136 and AN139. An example 2-layer layout which takes the above consid- erations into account is provided in Figure 8. It is imper- ative that the layout of any PCB carefully consider the capabilities of the PCB manufacturer and other applica- tion constraints. The example provided here should guide the layout of an application PCB. If the application or manufacturing capabilities mandate a different layout, be sure to keep the above guidance in mind for all changes. Note that the 4-layer layout is recommended for best per- formance. Please refer to the EVAL-LT8355-1-AZ eval- uation circuit for a 4-layer PCB reference layout design. |
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