| 전자부품 데이터시트 검색엔진 |
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MT3S41FS 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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MT3S41FS 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() MT3S41FS 2 2003-02-14 Microwave Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Transition Frequency fT VCE=3V, IC=20mA, f=2GHz 11 15 - GHz |S21e| 2(1) VCE=3V, IC=20mA, f=1GHz 13.5 15.5 - dB Insertion Gain |S21e| 2(2) VCE=3V, IC=20mA, f=2GHz 8 10 - dB NF(1) VCE=3V, IC=5mA, f=1GHz - 0.8 - dB Noise Figure NF(2) VCE=3V, IC=5mA, f=2GHz - 1.2 1.8 dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector Cut-off Current ICBO VCB=8V, IE=0 - - 1 µA Emitter Cut-off Current IEBO VEB=1V, IC=0 - - 1 µA DC Current Gain hFE VCE=3V, IC=20mA 70 - 140 - Output Capacitance Cob VCB=1V, IE=0, f=1MHz - 0.72 1.10 pF Reverse Transistor Capacitance Cre VCB=1V, IE=0, f=1MHz (Note 1) - 0.46 0.85 pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. |
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