BCV64B datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 21

Philips Semiconductors

Product speciﬁcation

PNP general purpose double transistor

BCV64B

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on a printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. Group selection will be done on TR1. Due to matched dies, hFE values for TR2 are the same as for TR1.

2. VBEsat decreases by approximately 1.7 mV/K with increasing temperature.

3. VBE decreases by approximately −2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−−15

IE = 0; VCB = −30 V; Tj = 150 °C

−−−5

µA

hFE

DC current gain

TR1

IC = −2 mA; VCE = −5 V

220

−

475

TR2

IC = −2 mA; VCE = −700 mV; note 1 220

−

475

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA

−−75

−300 mV

collector-emitter saturation voltage IC = −100 mA; IB = −5mA

TR1

−−250 −650 mV

TR2

−−250 −

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA; note 2

−−700 −

base-emitter saturation voltage

IC = −100 mA; IB = −5 mA; note 2

TR1

−−850 −

VBE

base-emitter voltage

TR1

IC = −2 mA; VCE = −5 V; note 3

−600 −650 −750 mV

TR1

IC = −10 mA; VCE = −5 V; note 3

−−−820 mV

TR2

IC = −2 mA; VCE = −700 mV; note 3 −−700

−

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

TR1

−

transition frequency

IC = −10 mA; VCE = −5V;

f = 100 MHz

TR1

100

−−

MHz

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