TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Charge

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

0

2

4

6

8

10

0

2

4

6

8

10

Q

g - Total Gate Charge (nC)

I

D = 3.9 A

V

DS = 20 V

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Temperature (°C)

I

D = 250 μA

I

D = 5 mA

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 3.9 A

V

GS = 4.5 V

V

GS = 10 V

0.00

0.03

0.06

0.09

0.12

0.15

0

2

4

6

8

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

41

43

45

47

49

51

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 1 mA

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