| 전자부품 데이터시트 검색엔진 |
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D90N03L 데이터시트(PDF) 9 Page - STMicroelectronics |
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D90N03L 데이터시트(HTML) 9 Page - STMicroelectronics |
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9 / 16 page ![]() STD90N03L - STD90N03L-1 9/16 Appendix A The power losses associated with the FETs in a Synchronous Buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature. The low side (SW2) device requires: ■ Very low RDS(on) to reduce conduction losses ■ Small Qgls to reduce the gate charge losses ■ Small Coss to reduce losses due to output capacitance ■ Small Qrr to reduce losses on SW1 during its turn-on ■ The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source ■ voltage to avoid the cross conduction phenomenon; The high side (SW1) device requires: ■ Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on the gate ■ Small Qg to have a faster commutation and to reduce gate charge losses ■ Low RDS(on) to reduce the conduction losses. Figure 16. Buck Converter: Power Losses Estimation |
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