BF494B datasheet(3/8 Pages) PHILIPS

3 / 8 page

1997 Jul 08

Philips Semiconductors

Product speciﬁcation

NPN medium frequency transistors

BF494; BF495

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

ICM

peak collector current

−

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

300

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

420

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−

100

IE = 0; VCB =20V; Tamb = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =4V

−

100

hFE

DC current gain

IC = 1 mA; VCE =10V

BF494

220

BF494B

100

220

BF495

125

BF495B

100

125

VBE

base-emitter voltage

IC = 1 mA; VCE = 10 V

650

740

Cre

feedback capacitance

IC = 0; VCB =10V; f=1MHz

−

1pF

transition frequency

IC = 1 mA; VCE = 10 V; f = 100 MHz

120

−

MHz

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