1996 Jul 29

2

Philips Semiconductors

Product specification

N-channel silicon junction

field-effect transistors

BF545A; BF545B; BF545C

FEATURES

• Low leakage level (typ. 500 fA)

• High gain

• Low cut-off voltage (max. 2.2 V for BF545A).

APPLICATIONS

• Impedance converters in e.g. electret microphones and

infra-red detectors

• VHF amplifiers in oscillators and mixers.

DESCRIPTION

N-channel symmetrical silicon junction field-effect

transistors in a SOT23 package.

PINNING - SOT23

PIN

SYMBOL

DESCRIPTION

1

s

source

2

d

drain

3

g

gate

Fig.1 Simplified outline and symbol.

Marking codes:

BF545A: M65.

BF545B: M66.

BF545C: M67.

handbook, halfpage

s

d

g

21

3

MAM036

Top view

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−±30

V

gate-source cut-off voltage

−0.4

−7.8

V

drain current

BF545A

2

6.5

mA

BF545B

6

15

mA

BF545C

12

25

mA

total power dissipation

−

250

mW

y

forward transfer admittance

3

6.5

mS