TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Current vs. Gate-Source Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-Source Voltage

Source-Drain Diode Forward Voltage

Threshold Voltage

Drain-Source Breakdown vs. Junction Temperature

VGS - Gate-to-Source Voltage (V)

10-8

10-6

10-4

10-2

10-10

0

6

12

18

24

30

TJ = 25 °C

TJ = 150 °C

0.6

0.9

1.2

1.5

1.8

2.1

- 50

- 25

0

25

50

75

100

125

150

175

ID =3.2 A

VGS =10V

TJ - Junction Temperature (°C)

0.00

0.04

0.08

0.12

0.16

0.20

012

345

67

89

10

TJ = 25 °C

TJ = 150 °C

VGS - Gate-to-Source Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

- 1.2

- 0.9

- 0.6

- 0.3

0.0

0.3

0.6

- 50

- 25

0

25

50

75

100

125

150

175

ID = 250 µA

ID =5 mA

TJ - Temperature (°C)

TJ - Junction Temperature (°C)

60

64

68

72

76

80

- 50

- 25

0

25

50

75

100

125

150

175

ID =1mA

VB7638

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