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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BF998WR 데이터시트(PDF) 8 Page - NXP Semiconductors |
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BF998WR 데이터시트(HTML) 8 Page - NXP Semiconductors |
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8 / 12 page  1997 Sep 05 8 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR Fig.15 Gain control testcircuit at f = 200 MHz. VDD = 12 V; GS = 2 mS; GL = 0.5 mS. L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm. L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm. Tapped at approximately half a turn from the cold side, to adjust GL = 0.5 mS. C1 adjusted for GS = 2 mS. VAGC 1 nF 1 nF 50 Ω input 50 Ω input 1 nF 1 nF L1 L2 20 µH 47 µF 1 nF 1 nF 1 nF 1 nF 47 k Ω 1.8 k Ω 360 Ω 140 k Ω 1 nF VDD VDD 15 pF 10 pF 100 k Ω 330 k Ω Vtun D1 BB405 C1 5.5 pF 330 k Ω D2 BB405 input Vtun output MGC481 |
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