| 전자부품 데이터시트 검색엔진 |
|
PTH08T210WAS 데이터시트(PDF) 2 Page - Texas Instruments |
|
|
|
|||||||||||||||||||||||||||||
PTH08T210WAS 데이터시트(HTML) 2 Page - Texas Instruments |
|
2 / 30 page ![]() www.ti.com PTH08T210W 2,6 5, 9 13 + 12 VI Track GND TT 7,8 3,4 GND GND +Sense 10 L O A D −Sense GND + 1 Inhibit INH/UVLO Track 14 11 −Sense +Sense UDG−05097 RTT 1% 0.05 W (Optional) CO 470 µF (Required) VO RSET 1% 0.05 W (Required) CI 470 µF (Required) RUVLO 1% 0.05 W (Opional) VOAdj TurboTranst VO VI PTH08T210W SLTS262D – OCTOBER 2005 – REVISED OCTOBER 2006 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. A. RSET is required to set the output voltage higher than 0.7 V. See the Electrical Characteristics table. ORDERING INFORMATION For the most current package and ordering information, see the Package Option Addendum at the end of this datasheet, or see the TI website at www.ti.com. 2 Submit Documentation Feedback |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |