BFG11SLASHX datasheet(3/12 Pages) PHILIPS

3 / 12 page

1995 Apr 07

Philips Semiconductors

Product speciﬁcation

NPN 2 GHz RF power transistor

BFG11; BFG11/X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

collector current (DC)

−

500

IC(AV)

average collector current

−

500

Ptot

total power dissipation

up to Ts =60 °C; note 1; see Fig.2

−

400

Tstg

storage temperature

−65

+150

°C

junction temperature

−

175

°C

Fig.2 Power derating curve.

handbook, halfpage

100

200

MLC818

150

T ( C)

Ptot

(mW)

300

500

400

100

THERMAL CHARACTERISTICS

Note to the “Limiting values” and “Thermal characteristics”

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

up to Ts =60 °C; note 1;

Ptot = 400 mW

290

K/W

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