BFG505SLASHX datasheet(2/16 Pages) PHILIPS

2 / 16 page

1998 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistors

BFG505; BFG505/X

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

RF front end applications in the GHz range, such as

analog and digital cellular telephones, cordless telephones

(CT1, CT2, DECT, etc.), radar detectors, pagers and

satellite TV tuners (SATV).

DESCRIPTION

NPN silicon planar epitaxial transistor in a 4-pin

dual-emitter SOT143B plastic package.

MARKING

TYPE NUMBER

CODE

BFG505

N33

BFG505/X

N39

PINNING

DESCRIPTION

BFG505

BFG505/X

collector

base

emitter

base

emitter

Fig.1 Simplified outline SOT143B.

handbook, 2 columns

Top view

MSB014

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCES

collector-emitter voltage RBE =0

−−

collector current (DC)

−−

Ptot

total power dissipation

Ts ≤ 130 °C

−−

150

hFE

DC current gain

VCE =6V; IC = 5 mA

120

250

Cre

feedback capacitance

VCB =6V; IC =ic = 0; f = 1 MHz

−

0.2

−

transition frequency

VCE =6V; IC = 5 mA; f = 1 GHz

−

GHz

GUM

maximum unilateral

power gain

VCE =6V; IC = 5 mA;

Tamb =25 °C; f = 900 MHz

−

VCE =6V; IC = 5 mA;

Tamb =25 °C; f = 2 GHz

−

S

21

insertion power gain

VCE =6V; Ic = 5 mA;

Tamb =25 °C; f = 900 MHz

−

noise ﬁgure

Γs = Γopt;VCE =6V; Ic = 1.25 mA;

Tamb =25 °C; f = 900 MHz

−

1.2

1.7

s = Γopt;VCE =6V; Ic = 5 mA;

Tamb =25 °C; f = 900 MHz

−

1.6

2.1

s = Γopt; VCE =6V; Ic = 1.25 mA;

Tamb =25 °C; f = 2 GHz

−

1.9

−

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