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BFG505/X 데이터시트(PDF) 2 Page - NXP Semiconductors

부품명 BFG505/X
상세설명  NPN 9 GHz wideband transistors
PDF  16 Pages
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFG505/X 데이터시트(HTML) 2 Page - NXP Semiconductors

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1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT2, CT3, PCN, DECT, etc.), radar detectors, pagers,
satellite television tuners (SATV).
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
MARKING
TYPE NUMBER
CODE
BFG505W
N0
BFG505W/X
N1
PINNING
PIN
DESCRIPTION
BFG505W
BFG505W/X
1
collector
collector
2
base
emitter
3
emitter
base
4
emitter
emitter
Fig.1 Simplified outline SOT343N.
handbook, halfpage
Top view
MBK523
2
1
3
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VCBO
collector-base voltage
open emitter
−−
20
V
VCES
collector-emitter voltage RBE =0
−−
15
V
IC
collector current (DC)
−−
18
mA
Ptot
total power dissipation
Ts ≤ 85 °C
−−
500
mW
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.2
−
pF
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb =25 °C
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb =25 °C
−
19
−
dB
IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb =25 °C12
−
dB
|S21|2
insertion power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb =25 °C15
16
−
dB
F
noise figure
Γs =Γopt; IC = 1.25 mA; VCE =6V; f=2GHz
−
1.9
−
dB



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