PMD2001D_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 28 August 2009

3 of 15

NXP Semiconductors

PMD2001D

MOSFET driver

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor; for the PNP transistor with negative polarity

VCBO

collector-base voltage

open emitter

-

40

V

VCEO

collector-emitter voltage

open base

-

40

V

IC

collector current

-

0.6

A

ICM

peak collector current

single pulse;

tp ≤ 1ms

-1

A

IBM

peak base current

-

0.1

A

single pulse;

tp ≤ 1ms

-

0.2

A

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

320

mW

[2] -

400

mW

[3] -

540

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 1cm2

(3) FR4 PCB, standard footprint

Fig 1.

Power derating curves

Tamb (°C)

−75

175

125

25

75

−25

006aaa768

200

400

600

Ptot

(mW)

0

(1)

(2)

(3)