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BAS32L

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Product data sheet

Rev. 7 — 20 January 2011

3 of 11

Nexperia

BAS32L

High-speed switching diode

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Tj =25 °C prior to surge.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

[1]

When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA.

[2]

When switched from IF =50mA; tr =20ns.

Ptot

total power dissipation

Tamb =25 °C

[1] -500

mW

Tj

junction temperature

-

200

°C

Tamb

ambient temperature

−65

+200

°C

Tstg

storage temperature

−65

+200

°C

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] --

350

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

--

300

K/W

Table 7.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

IF = 5 mA

620-

750mV

IF = 100 mA

-

-

1000

mV

IF =100 mA; Tj =100 °C-

-

930

mV

IR

reverse current

VR =20V

-

-

25

nA

VR =75V

-

-

5

μA

VR =20V; Tj =150 °C-

-

50

μA

VR =75V; Tj =150 °C-

-

100

μA

Cd

diode capacitance

VR =0V; f=1MHz

-

-

2

pF

trr

reverse recovery

time

[1] --

4

ns

VFR

forward recovery

voltage

[2] --

2.5

V