Nexperia

BAT85

Schottky barrier single diode

BAT85

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Nexperia B.V. 2012. All rights reserved

Product data sheet

24 July 2012

3 / 8

7. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 0.1 mA; Tamb = 25 °C

-

-

240

mV

IF = 1 mA; Tamb = 25 °C

-

-

320

mV

IF = 10 mA; Tamb = 25 °C

-

-

400

mV

IF = 30 mA; Tamb = 25 °C

-

-

500

mV

VF

forward voltage

IF = 100 mA; Tamb = 25 °C

-

-

800

mV

IR

reverse current

VR = 25 V; Tamb = 25 °C

-

-

2

µA

Cd

diode capacitance

f = 1 MHz; Tamb = 25 °C; VR = 1 V

-

-

10

pF

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tamb = 25 °C

-

-

4

ns

1.2

0.8

0.4

0

VF (V)

IF

(mA)

103

102

10

1

10- 1

mld358

(1) (2) (3)

(1)

(2) (3)

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

mgc682

105

IR

(nA)

104

103

102

10- 1

10

1

30

20

VR (V)

10

0

(1)

(2)

(3)

(1) Tamb = 85 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values