BLC10G22XS-401AVT

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© Ampleon Netherlands B.V. 2022. All rights reserved.

Product data sheet

Rev. 1 — 20 May 2022

2 of 14

BLC10G22XS-401AVT

Power LDMOS transistor

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

[1]

Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF

calculator.

5.

Thermal characteristics

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1

drain1 (main)

2

drain2 (peak)

3

gate1 (main)

4

gate2 (peak)

5

video decoupling (main)

6

video decoupling (peak)

7source

[1]

51

26

7

34

4

3

7

1, 5

2, 6

amp01357

Table 3.

Ordering information

Type number

Package

Name Description

Version

BLC10G22XS-401AVT -

air cavity plastic earless flanged package; 6 leads

SOT1275-1

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

-

65

V

VGS(amp)main

main amplifier gate-source voltage

6+9

V

VGS(amp)peak

peak amplifier gate-source voltage

6+9

V

Tstg

storage temperature

65

+150

C

Tj

junction temperature

[1] -225

C

Tcase

case temperature

operating

[1]

40

+125

C

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

Rth(j-c)

thermal resistance from junction

to case

VDS =30V; IDq = 580 mA (main);

VGS(amp)peak =0.70V; Tcase =80 C

PL = 56 W

0.29

K/W

PL = 71 W

0.27

K/W