BFS520 datasheet(5/11 Pages) PHILIPS

5 / 11 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFS520

In Figs 6 to 9, GUM = maximum unilateral power gain;

MSG = maximum stable gain; Gmax = maximum available

gain.

Fig.6

Maximum unilateral power gain as a

function of collector current.

VCE = 6 V; f = 900 MHz; Tamb =25 °C.

handbook, halfpage

MRC027

010

GUM

(dB)

IC (mA)

3 V

= 6 V

Fig.7 Gain as a function of collector current.

VCE = 6 V; f = 2 GHz; Tamb =25 °C.

handbook, halfpage

MRC026

102030

MSG

GUM

Gmax

gain

(dB)

IC (mA)

Fig.8 Gain as a function of frequency.

IC = 5 mA; VCE = 6 V; Tamb =25 °C.

handbook, halfpage

MRC024

10−1

10−2

110

f (GHz)

MSG

GUM

Gmax

gain

(dB)

Fig.9 Gain as a function of frequency.

IC = 20 mA; VCE = 6 V; Tamb =25 °C.

handbook, halfpage

MRC025

10−1

10−2

110

f (GHz)

MSG

GUM

Gmax

gain

(dB)

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