BFX85 datasheet(2/8 Pages) PHILIPS

2 / 8 page

1997 Apr 22

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

BFX85

FEATURES

• High current (max. 1 A)

• Low voltage (max. 60 V).

APPLICATIONS

• General purpose switching and amplification

• Industrial applications.

DESCRIPTION

NPN transistor in a TO-39 metal package.

PINNING

DESCRIPTION

emitter

base

collector, connected to case

Fig.1 Simplified outline (TO-39) and symbol.

handbook, halfpage

MAM317

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

100

VCEO

collector-emitter voltage

open base

−−

collector current (DC)

−−

Ptot

total power dissipation

Tamb ≤ 25 °C

−−

800

Tcase ≤ 100 °C

−−

2.86

hFE

DC current gain

IC = 150 mA; VCE = 10 V

142

−

transition frequency

IC = 50 mA; VCE = 10 V; f = 100 MHz

−−

MHz

toff

turn-off time

ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA −

360

−

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