NPN Silicon Epitaxial Planar Transistor

2SC2884

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-emitter breakdown voltage V(BR)CEO

IC=10mA,IB=0

30

V

Collector cut-off current

ICBO

VCB=35V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

VCE=1V,IC=100mA

100

320

DC current gain

hFE

VCE=1V,IC=700mA

35

Collector-emitter saturation voltage

VCE(sat)

IC=0.5A, IB=0.02A

0.5

V

Base-emitter voltage

VBE

VCE=1V, IC=10mA

0.5

0.8

V

Transition frequency

fT

VCE=5V,Ic=10mA

120

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

13

pF

CLASSIFICATION OF hFE

Rank

O

Y

Range

100-200

160-320

MARKING

PO1

PY1

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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