| 전자부품 데이터시트 검색엔진 |
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PTH08T220WAS 데이터시트(PDF) 2 Page - Texas Instruments |
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PTH08T220WAS 데이터시트(HTML) 2 Page - Texas Instruments |
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2 / 37 page ![]() www.ti.com RTT 1% 0.05 W (Optional) CO 220 µF (Required) VO RSET [A] 1% 0.05 W (Required) CI 330 µF (Required) RUVLO 1% 0.05 W (Opional) VOAdj TurboTranst VI PTH08T220W CI2 22 µF (Required) VI 2 5 9 + 8 Track GND TT 4 3 GND GND +Sense 6 L O A D −Sense GND + 11 Inhibit INH/UVLO Track 10 7 −Sense +Sense Vo SYNC 1 SmartSync UDG−05098 RTT 1% 0.05 W (Optional) CO 300 µF (Required) VO RSET [A] 1% 0.05 W (Required) CI 300 µF (Required) RUVLO 1% 0.05 W (Opional) VOAdj TurboTranst VO VI PTH08T221W 5 9 8 VI Track GND TT 4 3 GND GND +Sense 6 L O A D −Sense GND Inhibit INH/UVLO Track 10 7 −Sense +Sense SYNC 1 SmartSync 2 11 PTH08T220W, PTH08T221W SLTS252E – NOVEMBER 2005 – REVISED OCTOBER 2006 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. A. RSET required to set the output voltage to a value higher than 0.69 V. See Electrical Characteristics table. A. RSET required to set the output voltage to a value higher than 0.69 V. See Electrical Characteristics table. 2 Submit Documentation Feedback |
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