APT50GP60B2DF2 datasheet(1/9 Pages) ADPOW

부품명	APT50GP60B2DF2

상세설명	POWER MOS 7 IGBT

PDF	9 Pages

Scroll/Zoom	100%

제조업체	ADPOW [Advanced Power Technology]

홈페이지	http://www.advpowertech.com

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TYPICAL PERFORMANCE CURVES

APT50GP60B2DF2

T-MaxTM

G

C

E

The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.

Using Punch Through Technology this IGBT is ideal for many high frequency,

high voltage switching applications and has been optimized for high frequency

switchmode power supplies.

• Low Conduction Loss

• 200 kHz operation @ 400V, 28A

• Low Gate Charge

• 100 kHz operation @ 400V, 44A

• Ultrafast Tail Current shutoff

• SSOA rated

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

STATIC ELECTRICAL CHARACTERISTICS

MIN

TYP

MAX

600

3

4.5

6

2.2

2.7

2.1

750

3000

±100

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500µA)

Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)

Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2

Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2

Gate-Emitter Leakage Current (VGE = ±20V)

Symbol

BVCES

VGE(TH)

VCE(ON)

ICES

IGES

UNIT

Volts

µA

nA

Symbol

VCES

VGE

VGEM

IC1

IC2

ICM

SSOA

PD

TJ,TSTG

TL

APT50GP60B2DF2

600

±20

±30

100

72

190

190A@600V

625

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Gate-Emitter Voltage Transient

Continuous Collector Current 7 @ TC = 25°C

Continuous Collector Current @ TC = 110°C

Pulsed Collector Current 1

@ TC = 150°C

Safe Operating Area @ TJ = 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

POWER MOS 7® IGBT

G

C

E

APT50GP60B2DF2

600V

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