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BGY2016 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BGY2016 데이터시트(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page ![]() 2000 Jan 04 3 Philips Semiconductors Product specification UHF amplifier module BGY2016 CHARACTERISTICS Tmb =25 °C; VS1 =5V; VS2 = 26 V; PL = 16 W; ZS =ZL =50 Ω unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT f frequency 1805 − 1990 MHz IS1 supply current − 80 − mA IS2 supply current PD < −60 dBm − 430 − mA PL load power PD <20mW 16 −− W Gp power gain 28 − 35 dB ∆Gp in band gain variation f = 1805 to 1880 MHz; PL =5W −− 2dB f = 1930 to 1990 MHz; PL =5W −− 2dB Gp1 -Gp2 gain expansion Gp1 at PL = 160 mW; Gp2 at PL =5mW −−±1dB η efficiency PL =16W 30 −− % H2 second harmonic PL =16W −−−35 dBc H3 third harmonic PL =16W −−−40 dBc VSWRin input VSWR −− 2:1 stability VSWR ≤ 2 : 1 through all phases; PL ≤ 16 W; VS2 =25to27V −−−60 dBc reverse intermodulation Pcarrier = 16 W; Preverse = −40 dBc; fi =fc ±200 kHz −−−53 dBc B AM bandwidth corner frequency=3dB; Pcarrier = 16 W; modulation = 20% 2 −− MHz ruggedness VSWR ≤ 5 : 1 through all phases no degradation |
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