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AM29F800T 데이터시트(PDF) 26 Page - Advanced Micro Devices

부품명 AM29F800T
상세설명  8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
PDF  41 Pages
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29F800T 데이터시트(HTML) 26 Page - Advanced Micro Devices

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Am29F800T/Am29F800B
8/18/97
PR E L IM IN A R Y
AC CHARACTERISTICS
Read-only Operations Characteristics
Figure 7.
Test Conditions
Parameter
Symbols
Description
Test Setup
Speed Options (Notes 1
and 2)
Unit
JEDEC
Standard
-70
-90
-120
-150
tAVAV
tRC
Read Cycle Time (Note 4)
Min
70
90
120
150
ns
tAVQV
tACC
Address to Output Delay
CE = VIL
Max
70
90
120
150
ns
OE = VIL
tELQV
tCE
Chip Enable to Output Delay
OE = VIL
Max
70
90
120
150
ns
tGLQV
tOE
Output Enable to Output Delay
Max
30
35
50
55
ns
tEHQZ
tDF
Chip Enable to Output High Z (Notes 3, 4)
Max
20
20
30
35
ns
tGHQZ
tDF
Output Enable to Output High Z (Notes 3, 4)
Max
20
20
30
35
ns
tAXQX
tOH
Output Hold Time From Addresses, CE,
or OE, Whichever Occurs First
Min
00
00
ns
tReady
RESET Pin Low to Read Mode (Note 4)
Max
20
20
20
20
µs
tELFL
CE to BYTE Switching Low or High
Max
5
5
5
5
ns
tELFH
tFLQZ
BYTE Switching Low to Output High Z
(Note 3)
Max
20
30
30
30
ns
Notes:
1. Test Conditions (for -70 only):
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
input and output voltage: 1.5 V
2. Test Conditions (for all others):
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference
level, input and output voltages:
0.8 V and 2.0 V
3. Output driver disable time.
4. Not 100% tested.
2.7 k
Ω
Diodes = IN3064
or Equivalent
CL
6.2 k
Ω
5.0 V
IN3064
or Equivalent
Notes:
For -70: CL = 30 pF including jig capacitance
For all others: CL = 100 pF including jig capacitance
Device
Under
Test
20375C-12



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