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AM70PDL129CDH 데이터시트(PDF) 83 Page - SPANSION

부품명 AM70PDL129CDH
상세설명  Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
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November 24, 2003
Am70PDL127CDH/Am70PDL129CDH
81
ADV ANCE
I N FO RMAT I O N
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is a latch used to store the com-
mands, along with the address and data information
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the in-
puts and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Table 1.
Device Bus Operations
Legend: L = Logic Low = V
IL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 11.5–12.5 V, X = Don’t Care, SA = Sector Address,
A
IN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A21:A0 in word mode.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Group
Protection and Unprotection” section.
3. If WP# = V
IL, the first or last sector remains protected. If WP# = VIH, the first or last sector will be protected or unprotected as
determined by the method described in “Sector Group Protection and Unprotection”. All sectors are unprotected when shipped
from the factory (The SecSi Sector may be factory protected depending on version ordered.)
4. D
IN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2).
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V
IL. CE# is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at V
IH.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
See “Reading Array Data” for more information. Refer
to the AC Read-Only Operations table for timing speci-
fications and to Figure 14 for the timing diagram. Refer
to the DC Characteristics table for the active current
specification on reading array data.
Operation
CE#
OE#
WE#
RESET#
WP#
ACC
Addresses
(Note 2)
DQ0–
DQ7
DQ8–DQ
15
Read
L
L
H
H
XX
AIN
D
OUT
D
OUT
Write (Program/Erase)
L
H
L
H
(Note 3)
X
AIN
(Note 4)
(Note 4)
Accelerated Program
L
H
L
H
(Note 3)
V
HH
AIN
(Note 4)
(Note 4)
Standby
VCC ±
0.3 V
XX
VCC ±
0.3 V
XH
X
High-Z
High-Z
Output Disable
L
H
H
H
XX
X
High-Z
High-Z
Reset
X
X
X
L
XX
X
High-Z
High-Z
Sector Group Protect
(Note 2)
LH
L
VID
HX
SA, A6 =L,
A3=L, A2=L,
A1=H, A0=L
(Note 4)
X
Sector Group Unprotect
(Note 2)
LH
L
V
ID
HX
SA, A6=H,
A3=L, A2=L,
A1=H, A0=L
(Note 4)
X
Temporary Sector Group
Unprotect
XX
X
VID
HX
AIN
(Note 4)
(Note 4)



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