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NJ7002KDM 데이터시트(PDF) 2 Page - Nanjing International Group Co

부품명 NJ7002KDM
상세설명  SOT-23 -6L Plastic-Encap sulate MOSFETS
PDF  5 Pages
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제조업체  DGNJDZ [Nanjing International Group Co]
홈페이지  http://www.dgnjdz.com/
Logo DGNJDZ - Nanjing International Group Co

NJ7002KDM 데이터시트(HTML) 2 Page - Nanjing International Group Co

  NJ7002KDM Datasheet HTML 1Page - Nanjing International Group Co NJ7002KDM Datasheet HTML 2Page - Nanjing International Group Co NJ7002KDM Datasheet HTML 3Page - Nanjing International Group Co NJ7002KDM Datasheet HTML 4Page - Nanjing International Group Co NJ7002KDM Datasheet HTML 5Page - Nanjing International Group Co  
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Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static Characteristics
Drain-Source Breakdown Voltage
VDS
VGS = 0V, ID =250µA
60
V
Gate Threshold Voltage*
VGS(th)
VDS =VGS, ID =1mA
1
1.3
2.5
V
Zero Gate Voltage Drain Current
IDSS
VDS =48V,VGS = 0V
1
µA
IGSS1
VGS =±20V, VDS = 0V
±10
µA
Gate –Source leakage current
VGS = 4.5V, ID =200mA
1.1
3
Ω
Drain-Source On-Resistance*
RDS(on)
VGS =10V,ID =500mA
0.9
2.5
Ω
Diode Forward Voltage
VSD
VGS=0V, IS=300mA
1.5
V
Recovered charge
Qr
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µ
s
30
nC
Dynamic Characteristics**
Input Capacitance
Ciss
40
pF
Output Capacitance
Coss
30
pF
Reverse Transfer Capacitance
Crss
VDS =10V,VGS =0V,f =1MHz
10
pF
Switching Characteristics**
Turn-On Delay Time
td(on)
10
ns
Turn-Off Delay Time
td(off)
VGS=10V,VDD=50V,RG=50Ω,
RGS=50Ω, RL=250Ω
15
ns
Reverse recovery Time
trr
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µ
s
30
ns
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
BVGSO
Igs=±1mA (Open Drain)
±21.5
±30
V
Notes :
*Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.
**These parameters have no way to verify.
MOSFET ELECTRICAL CHARACTERISTICS
a
T =25
℃ unless otherwise specified
Dongguan Nanjing Electronics Ltd.
www.dgnjdz.com
2/5



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