BLF145 datasheet(8/12 Pages) PHILIPS

8 / 12 page

September 1992

Philips Semiconductors

Product speciﬁcation

HF power MOS transistor

BLF145

APPLICATION INFORMATION FOR CLASS-B OPERATION

Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 34 Ω; unless otherwise speciﬁed.

RF performance in SSB operation in a common source class-AB circuit.

Note

1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are

referred to the according level of either the equal amplified tones. Related to the according peak envelope power

these figures should be decreased by 6 dB.

MODE OF

OPERATION

(MHz)

VDS

(V)

IDQ

(A)

(W)

(dB)

ηD

(%)

(dB)

(note 1)

(dB)

(note 1)

(

Ω)

SSB, class-AB

0.25

30 (PEP)

typ. 20

typ. 40

typ.

−35

typ.

−40

8.9

+ j1.0

Ruggedness in class-AB operation

The BLF145 is capable of withstanding a load mismatch

corresponding to VSWR = 50 through all phases at

PL = 30 W single tone under the following conditions:

VDS = 28 V; f = 28 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W at

rated load power.

Fig.12 Power gain as a function of load power,

typical values.

Class-AB operation; VDS = 28 V; IDQ = 0.25 A;

Rth mb-h = 0.3 K/W; f = 28 MHz.

solid line: Th =25 °C.

dotted line: Th =70 °C.

handbook, halfpage

MGP043

(dB)

PL (W)

Fig.13 Two tone efficiency as a function of load

power, typical values.

Class-AB operation; VDS = 28 V; IDQ = 0.25 A;

Rth mb-h = 0.3 K/W; f = 28 MHz.

solid line: Th =25 °C.

dotted line: Th =70 °C.

handbook, halfpage

MGP044

ηD

(%)

PL (W)

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