PZTA44/45

NPN SILICON TRANSISTOR

2 of 4

ABSOLUTE MAXIMUM RATINGS (T

A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

PZTA44

VCBO

500

V

PZTA45

400

V

Collector-Emitter Voltage

PZTA44

VCEO

400

V

PZTA45

350

V

Emitter-Base Voltage

VEBO

6

V

Collector Current

IC

300

mA

Collector Dissipation

PC

1.2

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

J =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown

Voltage

PZTA44

BVCBO

IC=100μA, IB=0

500

V

PZTA45

400

V

Collector-Emitter Breakdown

Voltage

PZTA44

BVCEO

IC=1mA, IB=0

400

V

PZTA45

350

V

Emitter-Base Breakdown Voltage

BVEBO

IE=100μA, IC=0

6

V

Collector Cut-OFF Current

PZTA44

ICBO

VCB=400V, IE=0

0.1

μA

PZTA45

VCB=320V, IE=0

0.1

μA

Collector Cut-OFF Current

PZTA44

ICES

VCE=400V, IB=0

0.5

μA

PZTA45

VCE=320V, IB=0

0.5

μA

Emitter Cut-OFF Current

IEBO

VEB=4V, IC=0

0.1

μA

DC Current Gain (Note)

hFE

VCE=10V, IC=1mA

40

VCE=10V, IC=10mA

50

240

VCE=10V, IC=50mA

45

VCE=10V, IC=100mA

40

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=1mA, IB=0.1mA

0.4

V

IC=10mA, IB=1mA

0.5

V

IC=50mA, IB=5mA

0.75

V

Base-Emitter Saturation Voltage

VBE(SAT) IC=10mA, IB=1mA

0.75

V

Current Gain Bandwidth Product

fT

VCE=20V,Ic=10mA, f=100MHz

50

MHz

Output Capacitance

COB

VCB=20V, IE=0, f=1MHz

7

pF

Note: Pulse test: Pulse Width<300

μs, Duty Cycle<2%

DONGGUAN NANJING ELECTRONICS LTD.,

www.dgnjdz.com