1999 Dec 06

2

Philips Semiconductors

Preliminary specification

UHF power LDMOS transistor

BLF2045

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation.

APPLICATIONS

• Communication transmitter applications (PCN/PCS) in

the 1.8 to 2.2 GHz frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS

transistor encapsulated in a 2-lead flange package

(SOT467C) with a ceramic cap. The common source is

connected to the mounting flange.

PINNING - SOT467C

PIN

DESCRIPTION

1drain

2gate

3

source, connected to flange

Fig.1 Simplified outline.

1

3

2

Top view

MBK584

QUICK REFERENCE DATA

°C in a common source test circuit.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

(dBc)

2-tone, class-AB

26

30 (PEP)

>10

>30

≤−25

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

gate-source voltage

−±15

V

drain current (DC)

−

4.5

A

storage temperature

−65

150

°C

junction temperature

−

200

°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.