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STYN210(S) thru STYN1010(S)
Discrete Thyristors(SCRs)
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min.
Max.
12.70
13.97
14.73
16.00
9.91
10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Inches
Min.
Max.
0.500
0.550
0.580
0.630
0.390
0.420
0.139
0.161
0.230
0.270
0.100
0.125
0.045
0.065
0.110
0.230
0.025
0.040
0.100
BSC
0.170
0.190
0.045
0.055
0.014
0.022
0.090
0.110
Dimensions TO-220AB
G
A
K
A
K
G
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (180° conduction angle)
Tc = 100°C
10
A
IT(AV)
Average on-state current (180° conduction angle)
Tc = 100°C
6.4
A
ITSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
105
A
tp = 10 ms
100
I
²t
I
²t Value
tp = 10 ms
A2S
dI/dt
Critical rate of rise of on-state current
50
A/µs
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Tl
Maximum lead soldering temperature during 10s at 4.5mm from case
Dimensions TO-263(D
2PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
8.00
8.89
.315
.350
E
9.65
10.29
.380
.405
E1
6.22
8.13
.245
.320
e
2.54 BSC
.100 BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.20
0
.008
R
0.46
0.74
.018
.029
K
A
50
Gate supply:IG = 100mA dIG/dt = 1A/µs
260
°C
TYN
210
410
610
810
1010
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
200
400
600
800
1000
V
G
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